SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor(s)

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

This abstract first appeared for US patent application 19001610 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Original Abstract Submitted

A semiconductor structure and a method for forming the semiconductor structure are disclosed. The semiconductor structure includes a dielectric layer and a transistor. The transistor is at least partially disposed in the dielectric layer. The transistor includes a gate electrode, a gate dielectric layer, a source electrode, a drain electrode and a semiconductor layer. The gate dielectric layer is disposed over the gate electrode. The source electrode and the drain electrode are disposed over the gate dielectric layer and contact the gate dielectric layer. The semiconductor layer is disposed over the gate dielectric layer.