19001447. METHOD FOR FORMING SEMICONDUCTOR STRUCTURE (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
Inventor(s)
JUI-LIN Chu of HSINCHU CITY TW
SZU-YU Wang of HSINCHU CITY TW
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
This abstract first appeared for US patent application 19001447 titled 'METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
Original Abstract Submitted
A semiconductor structure includes a capacitor structure and a contact structure. The capacitor structure includes an electrode layer, a protective dielectric layer, and a capacitor dielectric layer. The protective dielectric layer covers a top surface of the electrode layer. The capacitor dielectric layer is on the protective oxide layer. The contact structure penetrates the protective oxide layer and electrically connects to the electrode layer.