19000827. SEMICONDUCTOR DEVICE (DENSO CORPORATION)
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Nobuyuki Kato of Kariya-city JP
SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 19000827 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
In a semiconductor device, a semiconductor element includes a semiconductor substrate and an upper electrode on a first surface of the semiconductor substrate. The semiconductor substrate has an IGBT region and a diode region. An upper conductor is disposed to face the upper electrode. An upper solder is interposed between the upper electrode and the upper conductor. An alloy layer is interposed between the upper electrode and the upper solder. The upper electrode includes an Al electrode disposed on the first surface and an Ni electrode disposed on the Al electrode. The upper solder contains Cu and Sn. The alloy layer contains Ni, Cu, and Sn. At least in a region overlapping with the diode region in a plan view along a thickness direction of the semiconductor substrate, a grain size of the upper solder is smaller on the semiconductor element side than on the upper conductor side.