19000267. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE (FUJI ELECTRIC CO., LTD.)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hidenori Tsuji of Higashimurayama-city JP
Shinya Takashima of Hachioji-city JP
Katsunori Ueno of Matsumoto-city JP
Takashi Yoshimura of Matsumoto-city JP
Shuntaro Yaguchi of Matsumoto-city JP
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 19000267 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Original Abstract Submitted
Provided is a semiconductor device having a semiconductor substrate with the oxygen chemical concentration of 1×10atoms/cmor more, wherein it includes the bulk donor and an increased donor, includes a buffer region of a first conductivity type that has a doping concentration higher than that of the drift region, and has a concentration of the thermal donor that is 10% or less of a concentration of the increased donor at a same depth position throughout an entire first range from a lower end of the buffer region to the deepest peak.