19000251. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE (FUJI ELECTRIC CO., LTD.)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Yuusuke Ooshima of Matsumoto-city JP
Takashi Yoshimura of Matsumoto-city JP
Hiroshi Takishita of Matsumoto-city JP
Shuntaro Yaguchi of Matsumoto-city JP
Hidenori Tsuji of Higashimurayama-city JP
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 19000251 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Original Abstract Submitted
Provided is a semiconductor device, comprising a semiconductor substrate with an upper surface and a lower surface, wherein: the semiconductor substrate has one or more hydrogen peaks, which are peaks of hydrogen chemical concentration, in a depth direction, and the one or more hydrogen peaks include a deepest peak furthest away from the lower surface of the semiconductor substrate; the semiconductor substrate has a lower region from the lower surface to the deepest peak, and an upper region arranged from the deepest peak to the upper surface; and for at least one of a carbon chemical concentration or an oxygen chemical concentration, a concentration in the lower region is twice or more of a concentration of the upper region.