SEMICONDUCTOR MEMORY DEVICES WITH DIELECTRIC FIN STRUCTURES

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

SEMICONDUCTOR MEMORY DEVICES WITH DIELECTRIC FIN STRUCTURES

This abstract first appeared for US patent application 18999459 titled 'SEMICONDUCTOR MEMORY DEVICES WITH DIELECTRIC FIN STRUCTURES

Original Abstract Submitted

A device includes a memory cell that randomly presents either a first logic state or a second logic state. The memory cell includes: a plurality of first nanostructures extending along a first lateral direction; a plurality of second nanostructures extending along the first lateral direction and disposed at a first side of the plurality of first nanostructures; a plurality of third nanostructures extending along the first lateral direction and disposed at a second side of the plurality of first nanostructures; a dielectric fin structure disposed immediately next to the plurality of first nanostructures along a second lateral direction, wherein a first sidewall of each of the plurality of first nanostructures facing toward or away from the second lateral direction is in contact with the dielectric fin structure; and a first gate structure wrapping around each of the plurality of first nanostructures except for the first sidewall.