18999454. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS (Tokyo Electron Limited)

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

Organization Name

Tokyo Electron Limited

Inventor(s)

Ryota Ifuku of Nirasaki-shi JP

Masataka Toiya of Nirasaki-shi JP

Eiki Kamata of Nirasaki-shi JP

Hiroki Yamada of Nirasaki-shi JP

Takashi Matsumoto of Nirasaki-shi JP

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

This abstract first appeared for US patent application 18999454 titled 'SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

Original Abstract Submitted

A method of processing a substrate includes placing the substrate on a stage in a process container, supplying a plasma generating gas into the process container to generate plasma of first power at a first pressure, controlling an inside of the process container to a second pressure lower than the first pressure, and supplying a carbon-containing gas into the process container to form a graphene film on the substrate.