18991809. LOW NOISE VERTICAL GATE DEVICE STRUCTURE (Taiwan Semiconductor Manufacturing Co., Ltd.)
LOW NOISE VERTICAL GATE DEVICE STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Seiji Takahashi of Hsinchu City TW
LOW NOISE VERTICAL GATE DEVICE STRUCTURE
This abstract first appeared for US patent application 18991809 titled 'LOW NOISE VERTICAL GATE DEVICE STRUCTURE
Original Abstract Submitted
Various embodiments of the present disclosure are directed towards an integrated chip including a photodetector in a substrate. A gate electrode comprises a first segment on a first surface of the substrate and a second segment in the substrate and adjacent to the photodetector. The first segment contacts a first region of the second segment and is laterally offset from a second region of the second segment. In top view a first area of the first segment is greater than a second area of the second region of the second segment.