18989404. WIRING IN DIFFUSION BREAKS IN AN INTEGRATED CIRCUIT (Tokyo Electron Limited)
WIRING IN DIFFUSION BREAKS IN AN INTEGRATED CIRCUIT
Organization Name
Inventor(s)
Lars Liebmann of Mechanicsville NY US
Daniel Chanemougame of Niskayuna NY US
Paul Gutwin of Williston VT US
WIRING IN DIFFUSION BREAKS IN AN INTEGRATED CIRCUIT
This abstract first appeared for US patent application 18989404 titled 'WIRING IN DIFFUSION BREAKS IN AN INTEGRATED CIRCUIT
Original Abstract Submitted
A semiconductor device includes a first three dimensional (3D) transistor and a second 3D transistor oriented parallel to the first 3D transistor disposed in a substrate, the first 3D transistor and the second 3D transistor being a subset of a plurality of transistors. The device includes a diffusion-break trench disposed in a region laterally separating the second 3D transistor from the first 3D transistor, the diffusion-break trench having a length extending along a lateral direction. The device includes a diffusion-break wire filling the diffusion-break trench, the diffusion-break wire having a height along a vertical direction, gates of the plurality of transistors being made of a different conductive material than the diffusion-break wire.