18984913. NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING SAME (KIOXIA CORPORATION)
NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING SAME
Organization Name
Inventor(s)
Yoshiaki Fukuzumi of Yokkaichi JP
NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING SAME
This abstract first appeared for US patent application 18984913 titled 'NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING SAME
Original Abstract Submitted
According to an embodiment, a non-volatile memory device includes a first conductive layer, electrodes, an interconnection layer and at least one semiconductor layer. The electrodes are arranged between the first conductive layer and the interconnection layer in a first direction perpendicular to the first conductive layer. The interconnection layer includes a first interconnection and a second interconnection. The semiconductor layer extends through the electrodes in the first direction, and is electrically connected to the first conductive layer and the first interconnection. The device further includes a memory film between each of the electrodes and the semiconductor layer, and a conductive body extending in the first direction. The conductive body electrically connects the first conductive layer and the second interconnection, and includes a first portion and a second portion connected to the second interconnection. The second portion has a width wider than the first portion.