SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

This abstract first appeared for US patent application 18984875 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Original Abstract Submitted

According to one embodiment, a source layer includes a semiconductor layer including an impurity. A stacked body includes a plurality of electrode layers stacked with an insulator interposed. A gate layer is provided between the source layer and the stacked body. The gate layer is thicker than a thickness of one layer of the electrode layers. A semiconductor body extends in a stacking direction of the stacked body through the stacked body and the gate layer. The semiconductor body further extends in the semiconductor layer where a side wall portion of the semiconductor body contacts the semiconductor layer. The semiconductor body does not contact the electrode layers and the gate layer.