SEMICONDUCTOR DEVICE INCLUDING GATE OXIDE LAYER

Organization Name

United Microelectronics Corp.

Inventor(s)

Ming-Hua Tsai of Tainan City TW

Jung Han of New Taipei City TW

Ming-Chi Li of Tainan City TW

Chih-Mou Lin of Tainan City TW

Yu-Hsiang Hung of Tainan City TW

Yu-Hsiang Lin of Kaohsiung City TW

Tzu-Lang Shih of Tainan City TW

SEMICONDUCTOR DEVICE INCLUDING GATE OXIDE LAYER

This abstract first appeared for US patent application 18983361 titled 'SEMICONDUCTOR DEVICE INCLUDING GATE OXIDE LAYER

Original Abstract Submitted

A semiconductor device includes a semiconductor substrate, a first gate oxide layer, and a first source/drain doped region. The first gate oxide layer is disposed on the semiconductor substrate, and the first gate oxide layer includes a main portion and an edge portion having a sloping sidewall. The first source/drain doped region is disposed in the semiconductor substrate and located adjacent to the edge portion of the first gate oxide layer. The first source/drain doped region includes a first portion and a second portion. The first portion is disposed under the edge portion of the first gate oxide layer in a vertical direction, and the second portion is connected with the first portion.