SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING APPARATUS

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SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING APPARATUS

This abstract first appeared for US patent application 18982168 titled 'SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING APPARATUS

Original Abstract Submitted

A substrate-processing method is provided for filling a recess formed in a surface of a substrate with a silicon nitride film. The substrate-processing method includes: a) repeating a cycle that includes i) supplying a silicon precursor gas to form an adsorption layer on the substrate, ii) supplying a nitrogen-containing gas to cause nitriding of the adsorption layer, and iii) supplying a helium-containing gas and generating helium plasma in a processing chamber to expose the substrate to the helium plasma, thereby forming an adsorption inhibition region on the substrate; and b) changing conditions for generating the helium plasma according to an increase in a number of the cycles repeated.