18981827. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor(s)
Akihisa Shimomura of Atsugi JP
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
This abstract first appeared for US patent application 18981827 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Original Abstract Submitted
A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.