18977231. SEMICONDUCTOR DEVICE WITH INTEGRATED RESISTOR AT ELEMENT REGION BOUNDARY (KABUSHIKI KAISHA TOSHIBA)
SEMICONDUCTOR DEVICE WITH INTEGRATED RESISTOR AT ELEMENT REGION BOUNDARY
Organization Name
Inventor(s)
Kanako Komatsu of Yokohama Kanagawa JP
SEMICONDUCTOR DEVICE WITH INTEGRATED RESISTOR AT ELEMENT REGION BOUNDARY
This abstract first appeared for US patent application 18977231 titled 'SEMICONDUCTOR DEVICE WITH INTEGRATED RESISTOR AT ELEMENT REGION BOUNDARY
Original Abstract Submitted
According to one embodiment, a semiconductor device includes a substrate having a first surface and an insulator that surrounds a first region of the first surface. A gate electrode is on the first region and has a first resistivity. A first conductor is also on the first region. The first conductor comprises a same material as the gate electrode, but has a second resistivity that is different from the first resistivity. The resistivity may be different, for example, by either use of different dopants/impurities or different concentrations of dopants/impurities. Resistivity may also be different due to inclusion of a metal silicide on the conductors or not.