MEMORY DEVICE AND OPERATING METHOD THEREOF

Organization Name

Inventor(s)

Sung Hyun Hwang of Icheon-si Gyeonggi-do KR

MEMORY DEVICE AND OPERATING METHOD THEREOF

This abstract first appeared for US patent application 18975567 titled 'MEMORY DEVICE AND OPERATING METHOD THEREOF

Original Abstract Submitted

A memory device includes a first sub-block including word lines, a second sub-block including word lines, and a peripheral circuit configured to apply voltages to the word lines of the first sub-block and the word lines of the second sub-block. The memory device also includes control logic configured to control the peripheral circuit to perform a partial program operation of storing data in the first sub-block, when a plurality of memory cells included in the first sub-block are erased and a plurality of memory cells included in the second sub-block are programmed. The control logic includes a program operation controller for controlling the peripheral circuit to apply a verify operation to a selected word line of the word lines of the first sub-block and then apply a voltage having a constant level to the word lines of the second sub-block in the partial program operation.