18970925. SEMICONDUCTOR DEVICE (FUJI ELECTRIC CO., LTD.)
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Tohru Shirakawa of Matsumoto-city JP
Yasunori Agata of Matsumoto-city JP
Naoki Saegusa of Matsumoto-city JP
SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18970925 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
There is provided a semiconductor device including: a pad portion that is provided above the upper surface of the semiconductor substrate and that is separated from the emitter electrode; a wire wiring portion that is connected to a connection region on an upper surface of the pad portion; a wiring layer that is provided between the semiconductor substrate and the pad portion and that includes a region overlapping the connection region; an interlayer dielectric film that is provided between the wiring layer and the pad portion and that has a through hole below the connection region; a tungsten portion that contains tungsten and that is provided inside the through hole and electrically connects the wiring layer and the pad portion; and a barrier metal layer that contains titanium and that is provided to cover an upper surface of the interlayer dielectric film below the connection region.