METHODS FOR MAKING SEMICONDUCTOR-BASED INTEGRATED CIRCUITS

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor(s)

METHODS FOR MAKING SEMICONDUCTOR-BASED INTEGRATED CIRCUITS

This abstract first appeared for US patent application 18970834 titled 'METHODS FOR MAKING SEMICONDUCTOR-BASED INTEGRATED CIRCUITS

Original Abstract Submitted

A method for making a IC is provided, including: identifying, in a schematic, first and second edge elements, which edge elements including devices whose layout patterns are configured to conform to a first layout grid; identifying all the elements between the first and second edge elements, at least one of the identified elements including a device whose layout pattern is configured to conform to a second layout grid that is finer than the first layout grid; and calculating a spatial quantity of a combined layout pattern of the identified elements between the first and second edge elements to determine whether the combined layout pattern conforms to the first layout grid.