18969191. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME (UNITED MICROELECTRONICS CORP.)
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Wen-Wen Zhang of Changhua County TW
Chun-Lung Chen of Tainan City TW
Chung-Yi Chiu of Tainan City TW
Ming-Chou Lu of Pingtung County TW
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
This abstract first appeared for US patent application 18969191 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Original Abstract Submitted
A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming an interlayer dielectric (ILD) layer on the gate structure, forming a contact hole in the ILD layer adjacent to the gate structure, performing a plasma doping process to form a doped layer in the ILD layer and a source/drain region adjacent to the gate structure, forming a conductive layer in the contact hole, planarizing the conductive layer to form a contact plug, removing the doped layer to form an air gap adjacent to the contact plug, and then forming a stop layer on the ILD layer and the contact plug.