18968046. COATING COMPOSITION FOR PHOTOLITHOGRAPHY (Taiwan Semiconductor Manufacturing Co., Ltd.)
COATING COMPOSITION FOR PHOTOLITHOGRAPHY
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Yen-Ting Chen of Taipei City TW
COATING COMPOSITION FOR PHOTOLITHOGRAPHY
This abstract first appeared for US patent application 18968046 titled 'COATING COMPOSITION FOR PHOTOLITHOGRAPHY
Original Abstract Submitted
Methods for making a semiconductor device using an improved BARC (bottom anti-reflective coating) are provided herein. The improved BARC comprises a polymer formed from at least a styrene monomer having at least one or two hydrophilic substituents. The monomer(s) and substituents can be varied as desired to obtain a balance between film adhesion and wet etch resistance. Also provided is a semiconductor device produced using such methods.
