SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Organization Name

Inventor(s)

Jae Young Oh of Icheon-si Gyeonggi-do KR

Dong Hwan Lee of Icheon-si Gyeonggi-do KR

Eun Seok Choi of Icheon-si Gyeonggi-do KR

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

This abstract first appeared for US patent application 18965724 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Original Abstract Submitted

A semiconductor memory device, and a method of manufacturing the same, includes a gate stack including an interlayer insulating layers and conductive patterns alternately stacked in a vertical direction on a substrate, a channel structure passing through the gate stack and having an upper end protruding above the gate stack, a memory layer surrounding a sidewall of the channel structure, and a source layer formed on the gate stack. The channel structure includes a core insulating layer extending in a central region of the channel structure in the vertical direction, and a channel layer surrounding a sidewall of the core insulating layer, the channel layer formed to be lower in the vertical direction than the core insulating layer and the memory layer.