18964949. INTEGRATED CIRCUIT STRUCTURE AND METHOD (Taiwan Semiconductor Manufacturing Co., Ltd.)
INTEGRATED CIRCUIT STRUCTURE AND METHOD
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
INTEGRATED CIRCUIT STRUCTURE AND METHOD
This abstract first appeared for US patent application 18964949 titled 'INTEGRATED CIRCUIT STRUCTURE AND METHOD
Original Abstract Submitted
A semiconductor device includes a first plurality of dies encapsulated by an encapsulant, an interposer over the first plurality of dies, an interconnect structure over and electrically connected to the interposer, and a plurality of conductive pads on a surface of the interconnect structure opposite the interposer. The interposer includes a plurality of embedded passive components. Each die of the first plurality of dies is electrically connected to the interposer. The interconnect structure includes a solenoid inductor in a metallization layer of the interconnect structure.