18964075. FILM FORMING METHOD AND FILM FORMING APPARATUS (Tokyo Electron Limited)
FILM FORMING METHOD AND FILM FORMING APPARATUS
Organization Name
Inventor(s)
Tomohiro Nakagawa of Yamanashi JP
FILM FORMING METHOD AND FILM FORMING APPARATUS
This abstract first appeared for US patent application 18964075 titled 'FILM FORMING METHOD AND FILM FORMING APPARATUS
Original Abstract Submitted
Film forming method of present disclosure's embodiment is method for forming silicon oxide film on substrate, and includes: (a) preparing substrate having on surface thereof first region where insulating film is exposed and second region where conductive film is exposed; (b) selectively forming inhibiting layer inhibiting silicon oxide film formation on second region; (c) forming silicon oxide film on first region while inhibiting silicon oxide film formation on second region by inhibiting layer; and (d) reforming silicon oxide film formed on first region. (c) includes (c1) supplying metal catalyst gas to surface and adsorbing it to first region; and (c2) supplying silanol-containing gas to surface to react it with metal catalyst gas adsorbed to first region to form silicon oxide film. (d) includes: (d1) exposing surface to plasma formed from hydrogen gas-containing first gas; and (d2) exposing surface to plasma formed from second gas containing inert gas without hydrogen gas.