18964049. ETCHING METHOD AND PLASMA PROCESSING APPARATUS (Tokyo Electron Limited)
ETCHING METHOD AND PLASMA PROCESSING APPARATUS
Organization Name
Inventor(s)
Masanori Hosoya of Kurokawa-gun JP
Yuki Chiba of Kurokawa-gun, Miyagi JP
Shun Itoh of Kurokawa-gun, Miyagi JP
Daisuke Nishide of Hsinchu Science Park TW
Takatoshi Orui of Hillsboro OR US
ETCHING METHOD AND PLASMA PROCESSING APPARATUS
This abstract first appeared for US patent application 18964049 titled 'ETCHING METHOD AND PLASMA PROCESSING APPARATUS
Original Abstract Submitted
A disclosed etching method includes (a) preparing a substrate in a chamber, (b) forming a deposit on the substrate, (c) supplying ions from a plasma generated from the process gas to the deposit to modify the deposit, and (d) etching the dielectric film by using a plasma after (c). The substrate includes a dielectric film and a mask. The deposit is supplied from a plasma generated from a process gas containing a gas component containing fluorine and carbon. A power level of a source radio frequency power in (c) is not higher than a power level of the source radio frequency power in (b). An electric bias has a level in (c) higher than a level of the electric bias in (b), or is not supplied in (b). A level of the electric bias in (d) is higher than the level of the electric bias in (c).
- Tokyo Electron Limited
- Rin Sasaki of Kurokawa-gun JP
- Masanori Hosoya of Kurokawa-gun JP
- Yuki Chiba of Kurokawa-gun, Miyagi JP
- Shun Itoh of Kurokawa-gun, Miyagi JP
- Daisuke Nishide of Hsinchu Science Park TW
- Takatoshi Orui of Hillsboro OR US
- Yuto Saito of Kurokawa-gun JP
- H01L21/311
- H01J37/305
- H01J37/32
- CPC H01L21/31116