SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Organization Name

Inventor(s)

Takeyoshi Nishimura of Matsumoto-city JP

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

This abstract first appeared for US patent application 18962850 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Original Abstract Submitted

A front electrode is in ohmic contact with a semiconductor substrate via a contact structure having a TiSix film, a TiN film, and a metal plug. The TiSix film is deposited directly by sputtering, and is provided along sidewalls (side surfaces of an interlayer insulating film) of a contact hole to an inner wall of a source contact trench. Ends of the TiSix film terminate on the side surfaces of the interlayer insulating film. A thickness of the TiSix film is uniform from the sidewalls of the contact hole to sidewalls of the source contact trench. The TiN film is provided along a surface of the TiSix film. The metal plug is embedded in the contact hole and the source contact trench, onto the TiN film.