18961960. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM (Tokyo Electron Limited)
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM
Organization Name
Inventor(s)
Hayato Tanoue of Kikuchi-gun JP
Yohei Yamashita of Kikuchi-gun JP
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM
This abstract first appeared for US patent application 18961960 titled 'SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM
Original Abstract Submitted
A substrate processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other includes forming a peripheral modification layer along a boundary between a peripheral portion of the first substrate as a removing target and a central portion of the first substrate; forming a non-bonding region in which bonding strength between the first substrate and the second substrate in the peripheral portion is reduced; and removing the peripheral portion starting from the peripheral modification layer. A first crack is developed from the peripheral modification layer toward the second substrate. The peripheral modification layer is formed such that a lower end of the first crack is located above the non-bonding region and an inner end of the non-bonding region is located at a diametrically outer side than the first crack.
