18961425. MEMORY STRUCTURE AND METHOD OF FORMING THEREOF (NANYA TECHNOLOGY CORPORATION)
MEMORY STRUCTURE AND METHOD OF FORMING THEREOF
Organization Name
Inventor(s)
Tseng-Fu Lu of New Taipei City (TW)
MEMORY STRUCTURE AND METHOD OF FORMING THEREOF
This abstract first appeared for US patent application 18961425 titled 'MEMORY STRUCTURE AND METHOD OF FORMING THEREOF
Original Abstract Submitted
A memory structure includes a substrate, an isolation area, a plurality of active areas and a first word line. The isolation area and the active areas are formed on the substrate. The isolation area surrounds the active areas, and the isolation area comprises an isolation structure formed in an isolation trench recessed in the isolation area. The first word line is formed across a first active area of the active areas and the isolation area. The first word line has a first width in the first active area and a second width in the isolation area. The first width is less than the second width.
