SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE

Organization Name

Inventor(s)

Byung Wook Bae of Icheon-si Gyeonggi-do (KR)

SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE

This abstract first appeared for US patent application 18960696 titled 'SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE

Original Abstract Submitted

A semiconductor memory device includes a bit line, a common source pattern above the bit line, a channel layer in contact with the common source pattern, the channel layer extending toward the bit line, and a filling insulating layer disposed between the bit line and the common source pattern, the filling insulating layer surrounding a first part of the channel layer. The semiconductor memory device also includes a gate stack structure disposed between the bit line and the filling insulating layer, the gate stack structure surrounding a second part of the channel layer. The semiconductor memory device further includes a first etch stop pattern on a sidewall of the filling insulating layer, a second etch stop pattern between the first etch stop pattern and the filling insulating layer, and a memory pattern between the gate stack structure and the channel layer.