18960197. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE (Japan Display Inc.)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Toshinari Sasaki of Tokyo (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18960197 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Original Abstract Submitted
A semiconductor device includes a metal oxide layer containing aluminum as a main component above an insulating surface, an oxide semiconductor layer on the metal oxide layer; a gate electrode facing the oxide semiconductor layer, and a gate insulating layer between the oxide semiconductor layer and the gate electrode, wherein a water contact angle on an upper surface of the metal oxide layer is 20° or lower.