SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE

Organization Name

Inventor(s)

Byung Wook Bae of Icheon-si Gyeonggi-do (KR)

Eun Seok Choi of Icheon-si Gyeonggi-do (KR)

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE

This abstract first appeared for US patent application 18958475 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE

Original Abstract Submitted

There are provided a semiconductor memory device and a method of manufacturing the semiconductor memory device. The semiconductor memory device includes a gate stack comprising a plurality of first interlayer insulating patterns and a plurality of conductive patterns alternately stacked, a dummy stack comprising a plurality of second interlayer insulating patterns and a plurality of sacrificial insulating layers, a plurality of step-shaped grooves defined at different depths in the gate stack, a plurality of openings passing through the dummy stack and spaced apart from each other, a first gap-fill insulating pattern filling the plurality of step-shaped grooves, a second gap-fill insulating pattern filling the plurality of openings, a plurality of conductive gate contacts passing through the first gap-fill insulating pattern and connected to the plurality of conductive patterns, and a plurality of conductive peripheral circuit contacts passing through the second gap-fill insulating pattern.