18956002. ETCHING METHOD AND PLASMA PROCESSING APPARATUS (Tokyo Electron Limited)
ETCHING METHOD AND PLASMA PROCESSING APPARATUS
Organization Name
Inventor(s)
Soichiro Kimura of Miyagi (JP)
Nobuhiro Odashima of Miyagi (JP)
Noboru Takemoto of Miyagi (JP)
Makoto Kobayashi of Miyagi (JP)
ETCHING METHOD AND PLASMA PROCESSING APPARATUS
This abstract first appeared for US patent application 18956002 titled 'ETCHING METHOD AND PLASMA PROCESSING APPARATUS
Original Abstract Submitted
An etching method includes a step (a) of providing a substrate, the substrate including a first film and a second film having an opening on the first film, the first film containing a metallic element and a non-metallic element, a step (b) of forming a protective film on a sidewall of a recess formed in the first film corresponding to the opening, and a step (c) of etching the first film through the opening with a plasma generated from a processing gas including a halogen-containing gas at the same time as or after the step (b).