18955997. ETCHING METHOD AND PLASMA PROCESSING APPARATUS (Tokyo Electron Limited)
ETCHING METHOD AND PLASMA PROCESSING APPARATUS
Organization Name
Inventor(s)
Soichiro Kimura of Miyagi (JP)
Nobuhiro Odashima of Miyagi (JP)
Noboru Takemoto of Miyagi (JP)
Makoto Kobayashi of Miyagi (JP)
ETCHING METHOD AND PLASMA PROCESSING APPARATUS
This abstract first appeared for US patent application 18955997 titled 'ETCHING METHOD AND PLASMA PROCESSING APPARATUS
Original Abstract Submitted
An etching method includes: (a) providing a substrate, the substrate including a first film and a second film having openings on the first film, the first film containing a metallic element and a non-metallic element, and (b) etching the first film through the openings. The (b) includes: (i) etching the first film through the openings with a first plasma generated from a first processing gas including a halogen-containing gas by supplying a pulse of a radio-frequency power, (ii) modifying a sidewall of a recess formed in the (i) with a second plasma generated from a second processing gas, and (iii) repeating the (i) and the (ii).