18954089. SPLIT PILLAR ARCHITECTURES FOR MEMORY DEVICES (Micron Technology, Inc.)
SPLIT PILLAR ARCHITECTURES FOR MEMORY DEVICES
Organization Name
Inventor(s)
Fabio Pellizzer of Boise ID US
Lorenzo Fratin of Buccinasco (MI) IT
SPLIT PILLAR ARCHITECTURES FOR MEMORY DEVICES
This abstract first appeared for US patent application 18954089 titled 'SPLIT PILLAR ARCHITECTURES FOR MEMORY DEVICES
Original Abstract Submitted
Methods, systems, and devices for split pillar architectures for memory devices are described. A memory device may include a substrate arranged with conductive contacts in a pattern and openings through alternative layers of conductive and insulative material that may decrease the spacing between the openings while maintaining a dielectric thickness to sustain the voltage to be applied to the array. After etching material, an insulative material may be deposited in a trench. Portions of the insulative material may be removed to form openings, into which cell material is deposited. Conductive pillars may extend perpendicular to the planes of the conductive material and the substrate, and couple to conductive contacts. The conductive pillars may be divided to form first and second pillars.
