18953248. THREE DIMENSIONAL STACKED NONVOLATILE SEMICONDUCTOR MEMORY (Kioxia Corporation)
THREE DIMENSIONAL STACKED NONVOLATILE SEMICONDUCTOR MEMORY
Organization Name
Inventor(s)
Hiroshi Maejima of Chigasaki-shi (JP)
THREE DIMENSIONAL STACKED NONVOLATILE SEMICONDUCTOR MEMORY
This abstract first appeared for US patent application 18953248 titled 'THREE DIMENSIONAL STACKED NONVOLATILE SEMICONDUCTOR MEMORY
Original Abstract Submitted
A three dimensional stacked nonvolatile semiconductor memory according to an example of the present invention includes a memory cell array comprised of first and second blocks. The first block has a first cell unit which includes a memory cell to be programmed and a second cell unit which does not include a memory cell to be programmed, and programming is executed by applying a program potential or a transfer potential to word lines in the first block after the initial potential of channels of the memory cells in the first and second cell units is set to a plus potential. In the programming, the program potential and the transfer potential are not applied to word lines in the second block.