18945577. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
Inventor(s)
MING-TE Chen of HSINCHU CITY (TW)
HUI-TING Tsai of TAINAN CITY (TW)
KUO-FENG Yu of HSINCHU COUNTY (TW)
CHUN HSIUNG Tsai of HSINCHU COUNTY (TW)
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME
This abstract first appeared for US patent application 18945577 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME
Original Abstract Submitted
A semiconductor structure, a method for manufacturing a FinFET structure and a method for manufacturing a semiconductor structure are provided. The method for forming a FinFET structure includes: providing a FinFET precursor including a plurality of fins and a plurality of gate trenches between the fins; forming a first portion of the trench dummy of a dummy gate within the plurality of gate trenches; removing at least a part of the first portion of the trench dummy; forming a second portion of the trench dummy over the first portion of the trench dummy; performing a first thermal treatment to the first and second portions of the trench dummy; and forming a blanket dummy of the dummy gate over the second portion of the trench dummy. The present disclosure further provides a FinFET structure with an improved metal gate.
