18945469. CERAMIC CIRCUIT SUBSTRATE AND SEMICONDUCTOR DEVICE USING SAME (KABUSHIKI KAISHA TOSHIBA)
CERAMIC CIRCUIT SUBSTRATE AND SEMICONDUCTOR DEVICE USING SAME
Organization Name
Inventor(s)
Keita Kanahara of Yokohama (JP)
CERAMIC CIRCUIT SUBSTRATE AND SEMICONDUCTOR DEVICE USING SAME
This abstract first appeared for US patent application 18945469 titled 'CERAMIC CIRCUIT SUBSTRATE AND SEMICONDUCTOR DEVICE USING SAME
Original Abstract Submitted
A ceramic circuit substrate according to an embodiment includes a ceramic substrate and multiple metal parts. The ceramic substrate includes a first surface. The multiple metal parts are located respectively in multiple first regions of the first surface. The first surface includes a second region positioned between adjacent first regions of the multiple metal parts. An average length RSm of roughness curve elements in the second region is not less than 40 μm. The average length RSm is preferably not more than 100 μm. A maximum peak height Rp of a surface roughness curve in the second region is preferably not less than 1.0 μm. A maximum valley depth Rv of a surface roughness curve in the second region is preferably not less than 1.0 μm.