18944589. CAPACITOR CELL AND STRUCTURE THEREOF (Taiwan Semiconductor Manufacturing Company, LTD.)
CAPACITOR CELL AND STRUCTURE THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, LTD.
Inventor(s)
Chien-Yao Huang of Taipei (TW)
Wun-Jie Lin of Hsinchu City (TW)
Chia-Wei Hsu of New Taipei City (TW)
CAPACITOR CELL AND STRUCTURE THEREOF
This abstract first appeared for US patent application 18944589 titled 'CAPACITOR CELL AND STRUCTURE THEREOF
Original Abstract Submitted
Capacitor cells are provided. A first PMOS transistor has a source connected to a power supply and a drain connected to a first node. A first NMOS transistor has a source connected to a ground and a drain connected to a second node. A second PMOS transistor has a source connected to the second node and a drain connected to the first node. A second NMOS transistor has a source connected to the ground and a drain connected to the first node. A first P+ doped region is shared by drains of the first and second PMOS transistors. A first gate metal is between the first P+ doped region and a second P+ doped region. A first N+ doped region is shared by sources of the first and second NMOS transistors. A second gate metal is between the first N+ doped region and a second N+ doped region.