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18944260. METHOD OF MEASURING FILM THICKNESS, AND SUBSTRATE PROCESSING APPARATUS (Tokyo Electron Limited)

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METHOD OF MEASURING FILM THICKNESS, AND SUBSTRATE PROCESSING APPARATUS

Organization Name

Tokyo Electron Limited

Inventor(s)

Yuji Otsuki of Albany NY (US)

Munehito Kagaya of Tokyo (JP)

Yusuke Suzuki of Nirasaki-shi (JP)

METHOD OF MEASURING FILM THICKNESS, AND SUBSTRATE PROCESSING APPARATUS

This abstract first appeared for US patent application 18944260 titled 'METHOD OF MEASURING FILM THICKNESS, AND SUBSTRATE PROCESSING APPARATUS

Original Abstract Submitted

A method of measuring a film thickness includes: storing, in a storage, relationship information indicating a relationship between an absorbance spectrum of a substrate, which has a recess formed therein and is subjected to substrate processing, and a film thickness of a film in the substrate subjected to the substrate processing, the absorbance spectrum being within a range including a peak of at least one of LO (Longitudinal Optical) phonons or TO (Transverse Optical) phonons of the film present on a surface of the substrate; performing the substrate processing on the substrate having the recess formed therein; measuring the absorbance spectrum of the substrate subjected to the substrate processing; and deriving, based on the relationship information, the film thickness of the film present on the surface of the substrate subjected to the substrate processing, from the measured absorbance spectrum.

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