18942312. RTP SUBSTRATE TEMPERATURE ONE FOR ALL CONTROL ALGORITHM (Applied Materials, Inc.)

RTP SUBSTRATE TEMPERATURE ONE FOR ALL CONTROL ALGORITHM

Organization Name

Applied Materials, Inc.

Inventor(s)

WOLFGANG Aderhold of Santa Clara CA (US)

YI Wang of Santa Clara CA (US)

RTP SUBSTRATE TEMPERATURE ONE FOR ALL CONTROL ALGORITHM

This abstract first appeared for US patent application 18942312 titled 'RTP SUBSTRATE TEMPERATURE ONE FOR ALL CONTROL ALGORITHM

Original Abstract Submitted

Embodiments disclosed herein include a method of processing a substrate. In an embodiment, the method comprises detecting one or more substrate parameters of a substrate in a processing chamber, and heating the substrate to a first temperature with an open loop tuning (OLT) heating process based on the one or more substrate parameters. In an embodiment, the method may further comprise placing the substrate on an edge ring, and heating the substrate to a second temperature with a low temperature closed loop controller. In an embodiment, the method further comprises heating the substrate to a third temperature with a high temperature closed loop controller.