18935536. SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD (Tokyo Electron Limited)

SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Organization Name

Tokyo Electron Limited

Inventor(s)

Gentaro Goshi of Kumamoto JP

SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

This abstract first appeared for US patent application 18935536 titled 'SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Original Abstract Submitted

A controller of a substrate processing apparatus executes: a first process in which a processing fluid is supplied to a processing container in a first period until a pressure in the processing container is increased and the processing fluid in the processing container reaches a supercritical state; a second process in which the processing fluid is supplied to the processing container at a flow rate larger than a flow rate of the processing fluid supplied to the first fluid ejector in the first process, in a second period; and a density adjustment process in which after ending of the first process and before starting of the second process, the density adjustment mechanism makes a difference between a density of the processing fluid present in the upstream region of a second opening/closing valve and a density of the processing fluid present in the processing container smaller than a predetermined threshold.