18929394. TOP DIE BACK-SIDE MARKING FOR MEMORY SYSTEMS (Micron Technology, Inc.)
TOP DIE BACK-SIDE MARKING FOR MEMORY SYSTEMS
Organization Name
Inventor(s)
Chun Ming Huang of Taichung TW
Angelo Oria Espina of Catarman PH
TOP DIE BACK-SIDE MARKING FOR MEMORY SYSTEMS
This abstract first appeared for US patent application 18929394 titled 'TOP DIE BACK-SIDE MARKING FOR MEMORY SYSTEMS
Original Abstract Submitted
Methods, systems, and devices for top die back-side marking for memory systems are described. One or more alignment marks may be added to the back-side of a top memory die in a multi-layer memory device and used to align a position of the top memory die relative to a position of a memory die below the top memory die. The alignment marks may be formed on the top memory die during the manufacturing process of the multi-layer memory device. Operations for forming the alignment marks are described using various semiconductor fabrication techniques. Operations are also disclosed for using the alignment marks to modify placement of the top memory die to reduce the alignment offset in the manufacturing process of subsequent memory dies.
- Micron Technology, Inc.
- Po Chien Li of Taichung TW
- Yu Kai Kuo of Taichung TW
- Yi Wen Chen of Taichung TW
- Ming Wei Tsai of Taichung TW
- Chien Nan Fan of Taichung TW
- Chun Ming Huang of Taichung TW
- Angelo Oria Espina of Catarman PH
- Chun Jen Chang of Taichung TW
- H01L23/544
- H01L21/66
- H01L23/00
- H01L25/065
- H10B80/00
- CPC H01L23/544