18924840. MONOLITHIC RGB MICROLED ARRAY (Snap Inc.)
MONOLITHIC RGB MICROLED ARRAY
Organization Name
Inventor(s)
Nicolas Poyiatzis of Sheffield GB
MONOLITHIC RGB MICROLED ARRAY
This abstract first appeared for US patent application 18924840 titled 'MONOLITHIC RGB MICROLED ARRAY
Original Abstract Submitted
A light emitting diode (LED) pixel array and method of fabrication thereof. A semiconductor wafer template includes a successively stacked lower n-GaN layer, lower MQW layer, lower p-GaN layer, upper n-GaN layer, and dielectric layer. A plurality of apertures is formed through the dielectric layer, extending to the upper n-GaN layer. A plurality of mesas is formed by forming, within each aperture, a mesa n-GaN layer, a mesa MQW layer above each mesa n-GaN layer, and a mesa p-GaN layer above each mesa MQW layer. The mesa n-GaN layer, mesa MQW layer, and mesa p-GaN layer of each mesa form a respective mesa LED. The lower n-GaN layer, lower MQW layer, and lower p-GaN layer form a lower LED.