18924689. Semiconductor Device (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
Semiconductor Device
Organization Name
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor(s)
Hitoshi Kunitake of Isehara JP
Semiconductor Device
This abstract first appeared for US patent application 18924689 titled 'Semiconductor Device
Original Abstract Submitted
A semiconductor device that occupies a small area is provided. The semiconductor device includes a first transistor including a first oxide semiconductor; a second transistor including a second oxide semiconductor; a capacitor element; a first insulator; and a first conductor in contact with a source or a drain of the second transistor. The capacitor element includes a second conductor, a third conductor, and a second insulator. The first transistor, the second transistor, and the first conductor are placed to be embedded in the first insulator. The second conductor is placed in contact with a top surface of the first conductor and a top surface of a gate of the first transistor. The second insulator is placed over the second conductor and the first insulator. The third conductor is placed to cover the second conductor with the second insulator therebetween.