18920187. VERTICAL POWER SEMICONDUCTOR DEVICE INCLUDING A SENSOR ELECTRODE (Infineon Technologies AG)
VERTICAL POWER SEMICONDUCTOR DEVICE INCLUDING A SENSOR ELECTRODE
Organization Name
Inventor(s)
Thomas Aichinger of Faak am See AT
Dethard Peters of Höchstadt DE
[[:Category:Andreas H�rner of Heroldsberg DE|Andreas H�rner of Heroldsberg DE]][[Category:Andreas H�rner of Heroldsberg DE]]
VERTICAL POWER SEMICONDUCTOR DEVICE INCLUDING A SENSOR ELECTRODE
This abstract first appeared for US patent application 18920187 titled 'VERTICAL POWER SEMICONDUCTOR DEVICE INCLUDING A SENSOR ELECTRODE
Original Abstract Submitted
A vertical power semiconductor device includes a silicon carbide (SiC) semiconductor body having opposite first and second surfaces. The SiC semiconductor body includes a transistor cell area including gate structures, a gate pad area, and an interconnection area electrically coupling a gate electrode of the gate structures and a gate pad of the gate pad area via a gate interconnection. The vertical power semiconductor device further includes a sensor electrode and a first interlayer dielectric having a first interface to the sensor electrode and a second interface to at least one of the gate electrode or the gate interconnection. A conduction band offset at the first interface ranges from 1 eV to 2.5 eV. The vertical power semiconductor device further includes a second interface to at least one of the gate electrode or the gate interconnection. The second interlayer dielectric laterally adjoins to the first interlayer dielectric.