18913070. SUBSTRATE PROCESSING METHOD (ASM IP Holding B.V.)
SUBSTRATE PROCESSING METHOD
Organization Name
Inventor(s)
Seungju Chun of Hwaseong-si KR
SUBSTRATE PROCESSING METHOD
This abstract first appeared for US patent application 18913070 titled 'SUBSTRATE PROCESSING METHOD
Original Abstract Submitted
Provided is a method of forming a conformal film on a recess of a substrate in a reaction chamber by repeating a cycle comprising forming a first film comprising supplying a silicon source and a reactant and applying a first power from a power supply unit to the reaction chamber while supplying the silicon source and the reactant, treating the first film by applying a second power from the power supply unit to the reaction chamber while supplying the reactant, wherein the first power is applied in a pulsed mode, wherein the power supply unit comprises a matching network comprising electronically variable capacitors.