18913040. FILM-FORMING METHOD AND FILM-FORMING APPARATUS (Tokyo Electron Limited)

FILM-FORMING METHOD AND FILM-FORMING APPARATUS

Organization Name

Tokyo Electron Limited

Inventor(s)

Hitoshi Kato of Iwate JP

FILM-FORMING METHOD AND FILM-FORMING APPARATUS

This abstract first appeared for US patent application 18913040 titled 'FILM-FORMING METHOD AND FILM-FORMING APPARATUS

Original Abstract Submitted

A film-forming method for forming a film on a substrate includes: (A) forming the film on the substrate by, in a process chamber, rotating the substrate, moving one of the substrate or a nozzle gas discharge mechanism relative to another of the substrate or the nozzle gas discharge mechanism, and discharging a film-forming gas toward the substrate from the discharge hole of the nozzle gas discharge mechanism; and (B) after (A), adjusting a film thickness of the film formed on the substrate by, in the process chamber, rotating the substrate, moving one of the substrate or the nozzle gas discharge mechanism relative to another of the substrate or the nozzle gas discharge mechanism, and discharging an etching gas toward the substrate from the discharge hole of the nozzle gas discharge mechanism.