Light-Emitting Device

Organization Name

Semiconductor Energy Laboratory Co., Ltd.

Inventor(s)

Shunpei Yamazaki of Tokyo JP

Satoshi Seo of Sagamihara JP

Nobuharu Ohsawa of Zama JP

Satoko Shitagaki of Isehara JP

Hideko Inoue of Atsugi JP

Hiroshi Kadoma of Sagamihara JP

Harue Osaka of Sagamihara JP

Kunihiko Suzuki of Isehara JP

Yasuhiko Takemura of Isehara JP

Light-Emitting Device

This abstract first appeared for US patent application 18899501 titled 'Light-Emitting Device

Original Abstract Submitted

A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more.