18896827. SEMICONDUCTOR STRUCTURE (Innolux Corporation)
SEMICONDUCTOR STRUCTURE
Organization Name
Inventor(s)
Yuan-Lin Wu of Miaoli County TW
Kuan-Feng Lee of Miaoli County TW
SEMICONDUCTOR STRUCTURE
This abstract first appeared for US patent application 18896827 titled 'SEMICONDUCTOR STRUCTURE
Original Abstract Submitted
A semiconductor structure including a first epitaxial region, a second epitaxial region, a gate structure, a source region, a source electrode and a drain electrode. The second epitaxial region is disposed on the first epitaxial region. The gate structure is disposed on the second epitaxial region. The source region is disposed on the second epitaxial region and adjacent to the gate structure. The source electrode is disposed on the source region and is electrically connected to the source region. The drain electrode is disposed on the first epitaxial region and is electrically connected to the first epitaxial region. The first epitaxial region includes an impurity region on a side away from the second epitaxial region, and a concentration of impurities included in the impurity region increases with approaching the second epitaxial region.