18895976. POWER AMPLIFIER SEMICONDUCTOR DEVICE (Nuvoton Technology Corporation Japan)
POWER AMPLIFIER SEMICONDUCTOR DEVICE
Organization Name
Nuvoton Technology Corporation Japan
Inventor(s)
Akihiko Nishio of Ishikawa (JP)
Katsuhiko Kawashima of Hyogo (JP)
POWER AMPLIFIER SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18895976 titled 'POWER AMPLIFIER SEMICONDUCTOR DEVICE
Original Abstract Submitted
A power amplifier semiconductor device includes: a substrate; a semiconductor layer provided on the surface of the substrate and including a plurality of unit HEMTs; a connection layer provided on the semiconductor layer and including a source electrode, a drain electrode, and a gate electrode of each of the plurality of unit HEMTs; a terminal layer provided on the connection layer; a back electrode which is provided on the bottom surface of the substrate and whose potential is set to a source potential; and substrate vias that pass through the substrate and have a shield wiring layer on inner walls of the substrate vias. In plan view, either one of the drain aggregation portion or the gate aggregation portion is or both of the drain aggregation portion and the gate aggregation portion are each surrounded by the substrate vias.