18895226. SELECTIVE PROCESSING WITH ETCH RESIDUE-BASED INHIBITORS (Lam Research Corporation)
SELECTIVE PROCESSING WITH ETCH RESIDUE-BASED INHIBITORS
Organization Name
Inventor(s)
Kashish Sharma of Tigard OR (US)
Taeseung Kim of Fremont CA (US)
Samantha S.H. Tan of Newark CA (US)
Dennis M. Hausmann of Lake Oswego OR (US)
SELECTIVE PROCESSING WITH ETCH RESIDUE-BASED INHIBITORS
This abstract first appeared for US patent application 18895226 titled 'SELECTIVE PROCESSING WITH ETCH RESIDUE-BASED INHIBITORS
Original Abstract Submitted
Selective deposition of a sacrificial material on a semiconductor substrate, the substrate having a surface with a plurality of regions of substrate materials having different selectivities for the sacrificial material, may be conducted such that substantial deposition of the sacrificial material occurs on a first region of the substrate surface, and no substantial deposition occurs on a second region of the substrate surface. Deposition of a non-sacrificial material may then be conducted on the substrate, such that substantial deposition of the non-sacrificial material occurs on the second region and no substantial deposition of the non-sacrificial material occurs on the first region. The sacrificial material may then be removed such that net deposition of the non-sacrificial material occurs substantially only on the second region.